Google Search

A1: Low temperature materials

Enhanced thermoelectric performance of p-type Bi-Sb-Te alloys by co-doping of Ga2Te3 and Ag

K. H. Lee1, S. M. Choi2, D. J. Yang3
1Kangwon National University, 2Korea University of Technology and Education, 3Samsung Advanced Institute of Technology

Herein we report an enhancement of the thermoelectric performance in spark plasma sintered polycrystalline p-type Bi0.42Sb1.58Te3 by co-doping of Ga2Te3 and Ag. Through the controlled doping of Ga2Te3 and Ag, the lattice thermal conductivity was reduced by enlarged point-defect phonon scattering, while electronic transport properties including power factor was not significantly deteriorated due to optimization of carrier concentration by co-doping of Ga2Te3 (n-type) and Ag (p-type). By these synergetic effects, the peak ZT of 1.15 was obtained in 2 wt.% Ga2Te3 doped Ag0.0015Bi0.42Sb1.5785Te3 at 360 K, and ZT could be engineered to be over ~1.0 for a wide temperature range (300 – 440 K).