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A2: Medium temperature materials
CuxGe1-xTe (x=0, 0.05, 0.10, 0.15) alloys were fabricated by vacuum synthesis firstly and then by high pressure (6.0GPa) sintering (HPS) method at 773K. The HPS samples were annealed for 24 hours in vacuum at 673K. The composition of the products were identified by X-ray diffraction, the microstructure were examined by SEM. The Electric conductivities (σ) and Seebeck coefficient (α) were measured in the temperature range of 300K-723K. The influence of the variation of Cu content on thermoelectric properties was studied. The experimental results show that the samples consist of nanoparticles before and after annealing. HPS together with annealing can improve the electrical properties. A peak power factor (α2σ) of 3.66 mW·m-1·K-2 at 723K is achieved for the sample annealed with x=0.15.