ICT2014 Abstracts

The deposition of transition metal layers on silicon and their reaction with substrate are important issues in semiconductor device technology. The interface between metal and semiconductor determines the device performance. The 3d transition metal monosilicides such as FeSi, CoSi, MnSi and CrSi have attracted much attention because they are easily formed in the interface between transition metal and Si. FeSi is a narrow band gap semiconductor. The activation energy for exciting electrons from the filled band to the empty band is estimated to be 0.05 eV from the experiments on the temperature dependence of the Mossbauer effect, magnetic susceptibility and NMR shift. On the other hand, the Mn₄Si₇ compound is well known a pseudo-direct band gap semiconductor (0.42 ~ 0.98 eV) with a fundamental gap increasing linearly with the compression along c- or a-axis. We have grown Fe and Mn thin films on Si (111) substrates at 600 ^oC using MBE, resulting in the formation of FeSi and Mn₄Si₇, respectively. In order to investigate the correlation between magnetization and charge carrier transport, we performed magnetoresistance and Hall resistance measurements by using a physical property measurement system. And we also report the thermoelectric power factors of 200 nm-thick, n-type, polycrystalline FeSi and Mn₄Si₇ films grown on Si(111) substrate.