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A3: High temperature materials

Doping and Alloying study of SnTe based material

Yibin Gao1, Bin He1, Michael Adams1, Bartek Wiendlocha2 Joseph P Heremans1
1 the Ohio State University, Columbus, Ohio2 AGH University of Science and Technology, Krakow, Poland

Tin Telluride is an environmentally friendly material that is promising for high temperature thermoelectric application. Undoped SnTe does not have high power factors because of the intrinsic tin vacancies and band structure, the Seebeck coefficient is usually less than 40μV/K at 300K. However, Indium has been identified as resonant level and could significantly increase 300K Seebeck coefficient as high as 77μV/K and thus improve the power factor and ZT[1,2]. In this study, we report electrical and thermal transport measure on SnTe based material system with Se substituting for Te as well as Indium doping. We also show result of KKR-CPA band structure calculations. The calculation and experiment result agree on that Indium can act as a resonant level in SnTe1-xSex alloyed system.

[1]Zhang, Qian, et. al. Proceedings of the National Academy of Sciences, July. Doi:10.1073/pnas.1305735110. (2013)

[2] G. S. Bushmarina, et al, Sov. Phys. Semicond. 11 1098 (1978)