ICT2014 Abstracts

Thermoelectric materials based on bismuth telluride (Bi₂Te₃) have been attracted great interests to achieve excellent thermoelectric properties at room temperature. Although great efforts have been put in the enhancement of the ZT value of Bi₂Te₃, the value still remains below 1. Therefore, a lot of studies have tried to enhance the ZT value through various methods such as electronic band engineering, the use of nanostructure, hot carrier filtering etc. In this study, we tried to dope Sn ions into Bi₂Te₃ films for the enhancement of the thermoelectric performance. Sn-doped Bi₂Te₃ films were epitaxially grown on 4^o off GaAs (100) substrate by metal organic chemical vapor deposition. Thermoelectric properties of the Sn-doped Bi₂Te₃ films were examined. The relationship between the thermopower enhancement and electronic band engineering of Bi₂Te₃ films through Sn doping will be discussed.