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A1: Low temperature materials

Effect of Sn doping on the thermoelectric properties of n-type Bi2(Te,Se)3 alloys

Jae-Uk Lee1,2, Deuk-Hee Lee1, Sang Soon Yim1,3, Dow-Bin Hyun1, Sahn Nahm2, and Jin-Sang Kim1
1Korea Institute of Scence and Technology, 2Korea University, 3Yonsei University

Bi2(Te,Se)3 alloys have the highest thermoelectric performance around room temperature in n-type region. However, n-type Bi2(Te,Se)3 have low Seebeck coefficient due to high carrier concentration. It is expected that Seebeck coefficient of n-type Bi2(Te,Se)3 can be improved by reduced carrier concentration. In this study, we investigated Sn doping effect on thermoelectric properties of n-type Bi2(Te,Se)3. The 0~0.05wt% Sn-doped n-type Bi2(Te0.9,Se0.1)3 compounds were fabricated by mechanical deformation follwed by hot pressing at 500℃. The electrical and thermoelectric properties were measured. With increasing the amount of Sn dopant, the Seebeck coefficient and electrical resistivity were increased by reduced carrier concentration. The 0.03wt% Sn-doped sample showed the maximum figure-of-merit of 1.95x10-3/K.