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A3: High temperature materials
With the development of industrialization, energy resources and environement issue have become a major society problem for the 21 centuries. Thermoelectric energy conversion can be used to capture electric power from waste heat in a variety of applications, extensive used in power generation and thermoelectric refrigeration. ZnO as a promising n-type semiconductor thermoelectric (TE) material attracted considerable attentions as high-temperature TE material due to low toxicity, high thermal stability, corrosion resistance and so on. In the present study, C-doped ZnO ceramics were prepared by hydrothermal synthesis (HS) and spark plasma sintering (SPS), whose TE performance was reported for the first time. The phase structure, microstructure and optical property were characterized by XRD, Raman, SEM, UV-vis et al. Compared with undoped ZnO ceremics, C-doped ZnO ceramics show the higher carrier concentration around ~1×1018 cm-3 at room temperature, which contributes to the higher electrical conductivity of 2800 Sm-1 and power factor of 2.5×10-4 Wm-1K-2.
Keywords: C-doped ZnO, Raman, Carrier concentration, Electrical conductivity