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A2: Medium temperature materials

Microstructure and Thermoelectric Properties of Cu2Sn1－xInxSe3 prepared by Self-propagating synthesis following Plasma Activated Sintering

Xin Cheng, Xinfeng Tang*
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China

Cu2SnSe3 has been found to be potential thermoelectric material in medium temperatures. Even though it has a relatively low electrical conductivity compared with those of traditional small-band-gap TE materials, a reasonable ZT value could still be achieved because of its naturally low thermal conductivity. In this study, the correlation between microstructure and thermoelectric properties of Cu2Sn1－xInxSe3 prepared by Self-propagating synthesis following Plasma Activated Sinteriny was investigated in this study. The second phase of Sn and g-CuSe in nano size was founded in Cu2Sn1－xInxSe3 after Self-propagating high temperature synthesis. And the second phase of Sn in nano scales was observed in the bulk of Cu2Sn1－xInxSe3. The maximum ZT value reaches 1.43 at 875 K for Cu2Sn0.9In0.1Se3.