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A2: Medium temperature materials

Effects of Bi Vacancy on Thermoelectric Properties in Bi1-xCuOSe

Tae-Ho An 1,2, Young Soo Lim 1, Won-Seon Seo 1, Cheol-Hee Park3 and Chan Park 2
1Korea Institute of Ceramic Engineering and Technology (KICET), Republic of Korea2Seoul National University, Republic of Korea3LG Chem/Research Park, Republic of Korea

 The effects of Bi vacancy on thermoelectric properties in Bi1-xCuOSe (x = 0-0.1) were investigated. Bi1-xCuOSe compounds were fabricated by a solid state reaction method and consolidated by spark plasma sintering (SPS) process. The electrical conductivity of the compound increased with the increase in the Bi-deficiency due to the increase in hole concentration by introducing Bi vacancies. Detailed charge transport properties in the compounds were characterized by using Hall measurement, and high-temperature x-ray diffraction patterns revealed that the transport properties in the Bi1-xCuOSe compounds were strongly influenced by the formation of CuSe. The maximum thermoelectric figure of merit (0.4 at 810K) was obtained in Bi0.975CuOSe, and this value was ~ 8% higher than that in the stoichiometric compound.