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A2: Medium temperature materials
GMZ Energy Inc., Waltham, MA 02453Department of Physics, University of Houston, Houston, TX 77004
Thermoelectric properties of nanostructured p-type half Heusler Hf0.5Zr0.5CoSb1-xSnx (x=0.1, 0.15, 0.2, 0.25, 0.3) compositions are investigated. The materials were prepared by using arc melting, ball milling and hot pressing process. Peak ZT of around 0.9 at 700 oC is obtained in all compositions. However, the electrical resistivity decreases with increasing tin (Sn) concentration which can be attributed to the increase in carrier concentration with Sn content. This study is beneficial for resistance matching of p- and n-type thermo elements in power generation devices to reduce electrical loss. Repeatability and thermal stability could also be improved due to less volatile Sb composition.