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B1: Contacting and insulation
1Mizoram University 2Mizoram University 3National Institute of Technology
In this letter a thickness-dependent interfacial distribution of oxide charges for thin metal oxide semiconductor (MOS) structures using high-k material ZrO2 has been methodically investigated. The interface charge densities are designed using capacitance-voltage (C-V) method and also conductance (G-V) method. It indicates that by reducing the effective oxide thickness (EOT) at 3.54 nm, 2.65 nm and 1.77 nm, the Dit increases linearly. For the same EOT, Dit has been found for the materials to be the order of 1012 cm-2eV-1 and it is originated to be in good agreement with published fabrication results at p-type doping level of 1 × 1017 cm-3. Numerical calculations and solutions are performed by MATLAB and device simulation is done by ATLAS.