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A3: High temperature materials

Ali Lahwal1*, S. Bhattacharya1, Jian He1, Di Wu2, S. J. Poon2, Lee Williams3, T. M. Tritt1*
1Department of Physics and Astronomy, Clemson University, Clemson, SC2Department of Physics, University of Virginia, Charlottesville, VA3Nanosonic Corporation, Blacksburg, VA 

We experimentally investigated the reduction of lattice thermal conductivity (KL) in the temperature range (30-800K) of n-type  Si80Ge20P2 alloys with the incorporation of Yttria Stabilized Zirconia (YSZ) nanoparticles (20 to 40 nm diameter) into the Si-Ge matrix. These samples were synthesized using the Spark Plasma Sintering (SPS) technique, which yielded densities > 95% of the theoretical density. The thermal conductivities at low and high temperatures were measured by steady state and laser flash techniques respectively. At T= 200K, about 40% and 50% reduction in the lattice thermal conductivity occurs by adding 5% and 10% by volume of YSZ respectively to the Si80Ge20P2 alloys.

A phenomenological model developed by Callaway is used to corroborate temperature dependence and reduction of KL at low and high temperatures of both Si80Ge20P2 and  Si80Ge20P2 + YSZ alloys. It is assumed that KL can be represented by phonon relaxation times arising from alloy disorder, Umklapp, and boundary scattering processes. In addition, contribution from the relaxation time for phonon scattering by YSZ nanoparticles included in the Si80Ge20P2 model, accounts for the observed reduction in KL. The theoretical calculations are in reasonably good agreement with the experimental results for both Si80Ge20P2 and Si80Ge20P2 + YSZ alloys.