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A2: Medium temperature materials

Gyeong-Seok Joo, Dong-Kil Shin and Il-Ho Kim*
Korea National University of Transportation, Korea (*ihkim@ut.ac.kr)

Many CoSb3-based skutterudite materials with a high thermoelectric figure of merit (ZT) have been reported. Recently, high performance of ZT>1.3 was achieved through the double or triple filling in the void of n-type skutterudites. However, the p-type skutterudites having ZT>1 are difficult to obtain. Therefore, good and reliable p-type skutterudites are required for applications to thermoelectric modules. In this study, RzFe4-xTxSb12 systems were examined for p-type skutterudites. La and Yb were used as double fillers, and Co was employed for charge compensation (T). La1-zYbzFe4-zCoxSb12 skutterudites were synthesized and thermoelectric properties were evaluated.