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A3: High temperature materials
State Key Laboratory of Silicon Materials, Deparment of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
High performance p-type FeVSb based half-Heusler alloys have been successfully synthesized by levitation melting followed by spark plasma sintering. The thermoelectric transport properties have been characterized from 300K to 900K. The electrical conductivity increases with increasing doping content while the Seebeck coefficient and thermal conductivity decrease. Band structure of FeVSb has been performed. and it is found that FeVSb is an indirect gap semiconductor with the band gap of 0.34eV, which is inconsistent with the experimental result. Beneficial from the optimized power factor and reduced thermal conductivity, a relatively high zT value can be obtained for this system.