T.C.Kamilov1, R.A. Muminov2, B.N. Zaveryukhin2,S.Zh. Karazhanov2, N.N. Zaveryukhina1, B.C. Kamilov1
1TashkentAviation Institute, 12 Akhunbabaev St., 700047, Uzbekistan
2Physical-TechnicalInstitute, 2B Mavlyqanov St, Tashkent, 700084, Uzbekistan
This work presents aninvestigation of the effect of ultrasound on thermoelectric properties of MnSibased films, converters and IR-detectors of thickness in the range from 1 to 20mm. Basic parameters of the films have beenstudied for the temperature range from 400 to 1000 K. Conversion factor (S) andthermoelectromotive force (
The devices have beenprocessed by ultrasound of frequency 3.5 MHz and of intensity 1 W/cm2 for 45minutes at T=240 K. As a result, the thermoelectric force coefficient has beenincreased significantly from the above range to a=360
The changes of theoutput parameters are suggested to be the result of ultrasound induced changesof electrophysical properties of the intergrain region because of the columnarstructure of the films. In the region the dangling bonds can cause the increaseof the density of states at the grain boundaries and are closely related toeffective thermal conductivity of the grains. Due to the ultrasound processingthermal conductivity of the grain decreases, which can result in the increaseof thermoelectromotive force. So, the ultrasound processing can be consideredas one of the approaches, which can help to optimize the output parameters ofthe devices.