Development of thermoelectric detectors on based higher manganese silicide (HMS) films

T.S. Kamilov¹, A.A.Uzokov¹, D.K. Kabilov¹, S.V. Ordin², V.V.Klechkovskaya³,

I.S. Zanaveskina³,R.A. Muminov⁴, B.N. Zaveryuhin⁴

¹Tashkent StateAviation Institute, 700047, 12 Akhunbabaeva St.,Tashkent, Uzbekistan.

²A.F.IoffePhysico-Technical Institute of the Russian Academy of Sciences,

194021, 26 PolitekhnicheskayaSt., Saint Petersburg, Russia

³ShubnikovInstitute of crystallography, 117333, 59 Leninsky prosp., Moscow, Russia.

⁴PhysicalTechnical-Institute of the Academy of Sciences of Republic of Uzbekistan,

700084,2B Mavlyanova St., Tashkent, Uzbekistan.

It is known that HMS – MnSi_1,71÷1,75is an anisotropic degenerative semiconductor and that it has high thermoelectricefficiency Z=0,7·10^–3 K^–1 in intervalT=400¸1000K. It is produced high effectivethermoelectric converters of it [1]. Besides, HMS has high chemical andradiation hardness.

At first in the world practice, we developed andcreated the technology of production of poly crystalline thin films MnSi_1,71¸1,75on the silicon substrates. These MnSi_1,71¸1,75films have better thermoelectric and photoelectric parameters than MnSi_1,71¸1,75single crystals. We also created thermoelectric converters and Infra Reddetectors on basic MnSi_1,71¸1,75films with thickness d=1¸20 mm.

The phase and structural analyses of MnSi_1,71¸1,75films were carried out by X-ray reflection, electron diffraction andtransmission electron microscopy methods. The analyses demonstrated that theMnSi_1,71¸1,75films have a polycrystalline columnar structure of crystallites. The growncrystallites have the normal orientation with respect to the Si-substrate.

The main parameters of MnSi_1,71¸1,75–thermoelectricconverters and MnSi_1,71¸1,75IR-detectors were studied at T=400¸1000K. These devices are stable and have the conversion factor S=500¸100mV/W thecoefficient thermo electromotive force a=150¸250 mV/K and theresponse time t£10^–6s at T=223¸1000K. It is notified that the technology of production of MnSi_1,71¸1,75– films and MnSi_1,71¸1,75– device is cheapand ecologic clear.

[1] ZaitsevV K 1985 CRC Handbook of Thermoelectrics ed D.W. Row (New York-London: CRC Press) p 299