¹ Faculty of ChemicalTechnology, University of Pardubice, Cs. Legii Square 565,

532 10 Pardubice, Czech Republic

² Department of Physics,University of Michigan, Ann Arbor, MI 48109-1120, USA

Titanium-dopedsingle crystals (c_Ti = 0 to 2x10²⁰ atoms cm^-3)were prepared from the elements Sb, Ti, and Te of 5N purity by a modifiedBridgman method. The obtained crystals were characterized by measurements ofthe temperature dependence of the electrical resistivity, Hall coefficient,Seebeck coefficient and thermal conductivity in the temperature range of 5-300K. It was observed that with an increasing Ti content in the samples theelectrical resistance, the Hall coefficient and the Seebeck coefficientincrease. This means that the incorporation ofTi atoms into the Sb₂Te₃ crystal structure results in adecrease in the concentration of holes in the doped crystals. For theexplanation of the observed effect a model of defects in the crystals isproposed.

1 Faculty of ChemicalTechnology, University of Pardubice, Cs. Legii Square 565,

532 10 Pardubice, Czech Republic

2 Department of Physics,University of Michigan, Ann Arbor, MI 48109-1120, USA

¹ Faculty of ChemicalTechnology, University of Pardubice, Cs. Legii Square 565,

² Department of Physics,University of Michigan, Ann Arbor, MI 48109-1120, USA