Bi2Te3 layers prepared by laser ablation
R. Zeipl1, S. Karamazov2, J. Jelínek3, P. Losták2, M. Pavelka3, Sz. Winiarz4, R. Czajka4,
J. Vanis1, F. Sroubek5, J. Zelinka1, J. Walachová1
1Institute of Radio Engineering and Electronics, Academy of Sciences of the Czech Republic, Chaberská 57, 18251 Prague, Czech Republic
2
University of Pardubice, Studentská 84, 53210 Pardubice, Czech Republic3
Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2,18221 Prague,Czech Republic
4
Poznan University of Technology, Faculty of Technical Physics, ul Nieszawska 13 A, 60-965 Poznan, Poland5
Institute of Information Theory and Automation, Pod vodárenskou vssí 4, 18208 Prague, Czech RepublicTransport properties are presented for 60 nm thick layers that were prepared by the laser ablation from Bi2Te3 target. The layers are deposited on quartz glass substrates. The energy density of the laser beam on the target is 2 Jcm-2 and temperature of the substrate varies between (20-480°C) for different samples. The influence of temperature of substrate during the deposition on topography of layers measured by STM (Scanning Tunnelling Microscope) is presented. It is also shown that prepared layers can be modified by STM when many scans are applied on the surface. The presence of the dip is demonstrated at the place where many STM scans were applied.