Thermoelectric
performance of large single crystal clathrate Ba8Ga16Ge30
L. Bertini1, K. Billquist2, D. Bryan3,M.
Christensen4, C. Gatti1,
L. Holmgren5, B.B. Iversen4, E. Mueller6, M.
Muhammed2, G. Noriega7, A.E.C. Palmqvist8,D. Platzek6, D.M. Rowe9, A.
Saramat8, C. Stiewe6, G.D. Stucky3,G.
Svensson8, M. Toprak2, S.G.K. Williams9,Y.
Zhang2
A method for growing large single crystals of the clathrate
Ba8Ga16Ge30 has been developed. Several
samples were cut from the as-grown single crystal ingot (diameter 8 mm and
length 46 mm) and were analyzed for chemical composition, crystal structure and
thermoelectric properties. These samples were found to be n‑doped with
average Seebeck coefficients increasing from –60 mv/K
at 300 K to –185 mv/K at 900 K. The thermal
conductivity was found to be close to 2 W/mK and slightly decreasing with
increasing temperature.
The resistivity of the
sample increased from 0.65 mW/cm at 300 K to 1.8 mW/cm at 900 K. Combining these results, the
dimensionless thermoelectric figure-of-merit ZT was found to increase from 0.08 at room
temperature to ~ 0.90
at 900 K, and did not show signs of reaching a maxima up to 900 K. These
results indicate that the thermoelectric performance of the Ba8Ga16Ge30
clathrate is within the same range as current state of the art materials in the
medium to high temperature range.