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C1: Waste heat recovery

Thermoelectric and Optical Properties of Si/Si+Sb Multinanolayered Thin Films Effected by  High Energy Radiation

S. Budak1*, E. Gulduren2, B. Allen1, J. Cole1, J. Lassiter3, T. Colon4, C. Muntele5, R. Parker6, C. Smith7, B. Johnson4
1EECS, AAMU, HSV, AL, 2Physics, UAH, HSV, AL, 3CIM, AAMU,HSV, AL, 4Physics, AAMU, HSV, AL, 5Cyg. Sci.Ser., HSV, AL, 6MAFSC, HSV, AL, 74 SIGHT INC. HSV, AL

We have prepared thermoelectric devices from alternating layers of Si/Si+Sb superlattice films using ion beam assisted deposition (IBAD). In order to determine the stoichiometry of the elements and the thickness of the grown multi-layer film, Rutherford Backscattering Spectrometry (RBS) and RUMP simulation have been used. The 5 MeV Si ion bombardments have been performed using the AAMU Pelletron ion beam accelerator, to make quantum clusters in the multi-layer superlattice thin films to improve the thermoelectric and optical properties for more efficient thermoelectric devices. The fabricated multilayered thermoelectric devices has been characterized using cross plane electrical conductivity and Seebeck coefficient, Van der Pauw resistivity, density, mobility, Hall coefficient, optical absorption, photoluminescence, Raman, and AFM measurements. High energy ion modification caused some remarkable thermoelectric and optical properties.

 Keywords: Ion bombardment, thermoelectric properties, multi-nanolayers, figure of merit.

*Corresponding author:

S. Budak; Tel.: 256-372-5894; Fax: 256-372-5855; Email: satilmis.budak@aamu.edu

 
 

Acknowledgement

Research sponsored by the Center for Irradiation of Materials (CIM),  National Science Foundation under NSF-EPSCOR R-II-3 Grant No. EPS-1158862, DOD under Nanotechnology Infrastructure Development for Education and Research through the Army Research Office # W911 NF-08-1-0425, and DOD Army Research Office # W911 NF-12-1-0063 and National Nuclear Security Admin (DOE/NNSA/MB-40) with grant# DE-NA0001896, NSF-REU with Award#1156137.