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C1: Waste heat recovery
The ternary chalcogenides AgBiTe2 and AgSbTe2 belong to family of semiconductors with disordered NaCl cubic structure in which silver and antimony occupy metal sub-lattice. We have grown the single layers of AgBiTe and AgSbTe thin films on silicon and silica (suprasil) substrates using physical vapor deposition (PVD). The high-energy (MeV) Si ion bombardments were performed on samples at five different fluences between 5×1013-5×1015 ions/cm2. The MeV Si ions bombardments caused changes on the thermoelectric properties of the thin films. We have measured the thermoelectric efficiency (figure of merit, ZT) of the fabricated devices by measuring the cross plane thermal conductivity by the 3rd harmonic method, the cross plane Seebeck coefficient, and the electrical conductivity using the Van Der Pauw method before and after the MeV Si ions bombardments. Rutherford Backscattering Spectrometry (RBS) and RUMP simulation package program were used to analyze the elemental composition and thickness of deposited materials.
*Corresponding author:
S. Budak; Tel.: 256-372-5894; Fax: 256-372-5855; Email: satilmis.budak@aamu.edu
Acknowledgement
Research sponsored by the Center for Irradiation of Materials (CIM), National Science Foundation under NSF-EPSCOR R-II-3 Grant No. EPS-1158862, DOD under Nanotechnology Infrastructure Development for Education and Research through the Army Research Office # W911 NF-08-1-0425, and DOD Army Research Office # W911 NF-12-1-0063 and National Nuclear Security Admin (DOE/NNSA/MB-40) with grant# DE-NA0001896, NSF-REU with Award#1156137.
