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A7: Developments in measurement techniques and preparation methods

Xinfeng Tang1,Xianli Su1, Fan Fu1, Yonggao Yan1,  and Ctirad Uher2
1 State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China2 Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, USA

We have applied this synthesis process to, among others, Bi2Te3, Bi2Se3, Cu2Se, Cu2SnSe3, half-Heusler alloys, lead chalcogenides, skutterudites, and magnesium silicides for the first time. we obtained a single phase material with thermoelectric properties better or on par with materials prepared by the traditional routes of synthesis. This is due to the purification process associated with the passage of a reaction zone through the ingot and the maintenance of exact stoichiometry on account of a very short duration of synthesis and minimal exposure to oxygen. Moreover, we found that the criterion often quoted in the literature as the necessary precondition for self-sustainability of the combustion wave, Tad 1800 K is not universal and certainly not applicable to thermoelectric compound semiconductors. Instead, we offer new empirically-based criterion, Tad/Tm,L > 1, i.e., the adiabatic temperature must be high enough to melt the lower melting point component. This new criterion covers all materials synthesized by SHS, including the high temperature refractory compounds for which the Tad > 1800 K criterion was originally developed. Our work opens a new avenue for ultra-fast, low cost, mass production fabrication of efficient thermoelectric materials and the new insight into the combustion process greatly broadens the scope of materials that can be successfully synthesized by SHS processing.