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A1: Low temperature materials

Preparation and Thermoelectric Properties of n-Type Bi2Te2.7Se0.3:Dm

Go-Eun Lee1, A-Young Eum1, Kwon-Min Song1, Il-Ho Kim1*, Young Soo Lim2, Won-Seon Seo2, Byeong-Jun Choi3 and Chang-Won Hwang3
1Korea National University of Transportation, Korea (*ihkim@ut.ac.kr)2Korea Institute of Ceramic Engineering and Technology, Korea3SEEPEL, Korea

Bismuth chalcogenides such as p-type (Bi,Sb)2Te3 and n-type Bi2(Te,Se)3 are excellent thermoelectric materials near room temperature. They can form homogeneous solid solutions because Bi2Te3, Sb2Te3 and Bi2Se3 have the same class of crystal symmetry. Thermoelectric figure of merit can be improved by increasing the power factor through doping or by reducing the thermal conductivity through forming solid solution. In this study, n-type Bi2Te2.7Se0.3:Dm (D: dopant such as I, Cu, Ag) solid solutions were prepared by encapsulated melting and hot pressing. Doping effects on the thermoelectric and the transport properties were evaluated.